JANSR2N7476T1 Datasheet, PDF (6/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

IRHMS57260SE, JANSR2N7476T1
Pre-Irradiation
50
40
30
20
10
0
25
50
75
100
125
150
T_C , Case Temperature ( ^°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
V_DS
V_GS
R_G
R_D
D.U.T.
V_GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+_-VDD
Fig 10a. Switching Time Test Circuit
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off) t_f
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
P _DM
t₁
t₂
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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