JANSR2N7476T1 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

PD - 94765
IRHMS57260SE
RADIATION HARDENED
JANSR2N7476T1
POWER MOSFET
200V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
REF: MIL-PRF-19500/685
5 TECHNOLOGY
™
Part Number
Radiation Level R_DS(on) ID QPL Part Number
IRHMS57260SE 100K Rads (Si) 0.044Ω 45A JANSR2N7476T1
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Low-Ohmic
TO-254AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
45
29
A
180
208
W
1.67
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy Á
256
Avalanche Current À
45
Repetitive Avalanche Energy À
20.8
Peak Diode Recovery dv/dt Â
19.8
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in.(1.6 mm from case for 10s))
Weight
9.3 ( Typical)
V
mJ
A
mJ
V/ns
o_C
g
For footnotes refer to the last page
www.irf.com
1
09/07/04