JANSR2N7476T1 Datasheet, PDF (4/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

IRHMS57260SE, JANSR2N7476T1
Pre-Irradiation
1000
100
10
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
1
0.1
0.01
0.01
5.0V
60µs PULSE WIDTH, Tj = 25°C
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
10
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
1
5.0V
0.1
0.01
60µs PULSE WIDTH
Tj = 150°C
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
10
TJ = 150°C
TJ = 25°C
1
0.1
5
VDS
60µs
= 50V
PU¹L⁵SE
WIDTH
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
3.0 _{ID = 45A}
2.5
2.0
1.5
1.0
0.5
V_GS = 12V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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