JANSR2N7476T1 Datasheet, PDF (2/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

IRHMS57260SE, JANSR2N7476T1
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage 200
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
2.5
gfs
Forward Transconductance
35
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td_(on)
tr
td_(off)
tf
LS + LD
Gate-to-Source Leakage Forward
—
Gate-to-Source Leakage Reverse
—
Total Gate Charge
—
Gate-to-Source Charge
—
Gate-to-Drain (‘Miller’) Charge
—
Turn-On Delay Time
—
Rise Time
—
Turn-Off Delay Time
—
Fall Time
—
Total Inductance
—
Ciss
Input Capacitance
—
Coss
Output Capacitance
—
Crss
Reverse Transfer Capacitance
—
Rg
Internal Gate Resistance
—
Typ Max Units
——
V
0.25 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.044 Ω
VGS = 12V, ID = 29A _Ã
— 4.5
——
— 10
— 25
— 100
— -100
— 165
— 45
— 75
— 35
— 125
— 80
— 50
6.8 —
5295 —
900 —
37 —
1.47 —
V
S( )
µA
nA
nC
ns
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 29A Ã
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 45A
VDS = 100V
VDD = 100V, ID = 45A
VGS =12V, RG = 2.35Ω
nH ^{Measured from Drain lead (6mm /0.25in.}
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
VGS = 0V, VDS = 25V
pF
f = 1.0MHz
Ω
f = 0.89MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode) — — 45
A
ISM Pulse Source Current (Body Diode) À
— — 180
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 450 ns
QRR Reverse Recovery Charge
— — 6.9 µC
Tj = 25°C, IS = 45A, VGS = 0V Ã
Tj = 25°C, IF = 45A, di/dt ≤100A/µs
VDD ≤ 25V Ã
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
— — 0.60
— 0.21 —
— — 48
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com