JANSR2N7476T1 Datasheet, PDF (5/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

Pre-Irradiation
IRHMS57260SE, JANSR2N7476T1
10000
8000
6000
4000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
C_oss
2000
C_rss
0
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = 45A}
16
V_DS = 160V
V_DS = 100V
V_DS = 40V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
10
TJ = 25°C
1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µs
10
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1.0
10
10ms
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5