IRFP26N60LPBF Datasheet, PDF (6/9 Pages) International Rectifier – HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210mΩ , Trr typ. = 170ns , ID = 26A )

IRFP26N60LPbF
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
P _DM
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
t₁
t₂
Notes:
1. Duty factor D =
t₁/ t ₂
2. Peak T _J = P _DM x Z _thJC + T _C
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6.0
5.0
4.0
ID = 250µA
3.0
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
6
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