IRFP26N60LPBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210mΩ , Trr typ. = 170ns , ID = 26A )

IRFP26N60LPbF
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
100
Coss
10
1
Crss
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
30
25
20
15
10
5
0
0 100 200 300 400 500 600 700
VDS, Drain-to-Source Voltage (V)
Fig 6. Typ. Output Capacitance
Stored Energy vs. V_DS
12.0
10.0
ID= 26A
8.0
VDS= 480V
VDS= 300V
VDS= 120V
6.0
1000.00
100.00
10.00
TJ = 150°C
4.0
2.0
0.0
0
25 50 75 100 125 150
QG Total Gate Charge (nC)
Fig 7. Typical Gate Charge Vs.
Gate-to-Source Voltage
4
1.00
TJ = 25°C
0.10
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode
Forward Voltage
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