IRFP26N60LPBF Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210mΩ , Trr typ. = 170ns , ID = 26A )

1000
100
10
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
1
0.1
0.01
0.1
5.5V
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
IRFP26N60LPbF
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.5V
10
6.0V
BOTTOM 5.5V
1
5.5V
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000.00
100.00
10.00
TJ = 150°C
TJ = 25°C
1.00
0.10
2.0
VDS = 50V
20µs PULSE WIDTH
4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0
ID = 26A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3