IRFP26N60LPBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210mΩ , Trr typ. = 170ns , ID = 26A )

SMPS MOSFET
PD - 95011
IRFP26N60LPbF
Applications
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control applications
• Lead-Free
HEXFET^® Power MOSFET
V_DSS R_DS(on) typ. ^{Trr typ.} I_D
600V 210mΩ 170ns 26A
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise immunity.
TO-247AC
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V
c ^{ID @ TC = 100°C Continuous Drain Current, VGS @ 10V}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Max.
26
17
100
470
Units
A
W
V_GS
dv/dt
T_J
T_STG
Linear Derating Factor
d ^{Gate-to-Source Voltage}
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
3.8
±30
21
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
1.1(10)
N•m (lbf•in)
Symbol
Parameter
Min. Typ. Max. Units Conditions
I_S
Continuous Source Current
––– ––– 26
MOSFET symbol
D
(Body Diode)
A showing the
I_SM
Ãc ^{Pulsed Source Current}
(Body Diode)
V_SD
Diode Forward Voltage
––– ––– 100
––– ––– 1.5
integral reverse
G
f ^{p-n junction diode.}
S
V T_J = 25°C, I_S = 26A, V_GS = 0V
t_rr
Q_rr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
170 250
210 320
670 1000
1050 1570
ns
nC
T_J = 25°C, I_F = 26A
f T_J = 125°C, di/dt = 100A/µs
f T_J = 25°C, I_S = 26A, V_GS = 0V
f T_J = 125°C, di/dt = 100A/µs
I_RRM
Reverse Recovery Current
––– 7.3 11 A T_J = 25°C
t_on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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2/12/04