IRFP26N60LPBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210mΩ , Trr typ. = 170ns , ID = 26A )

IRFP26N60LPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
I_DSS
I_GSS
R_G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
600
–––
–––
3.0
–––
–––
–––
–––
–––
Typ.
–––
0.33
210
–––
–––
–––
–––
–––
0.8
Max. Units
Conditions
––– V V_GS = 0V, I_D = 250µA
f ^{––– V/°C Reference to 25°C, ID = 1mA}
250 _mΩ V_GS = 10V, I_D = 16A
5.0
V V_DS = V_GS, I_D = 250µA
50 µA V_DS = 600V, V_GS = 0V
2.0 mA V_DS = 480V, V_GS = 0V, T_J = 125°C
100 nA V_GS = 30V
-100
V_GS = -30V
––– Ω f = 1MHz, open drain
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss eff.
C_oss eff. (ER)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
13 ––– –––
––– ––– 180
––– ––– 61
––– ––– 85
––– 31 –––
––– 110 –––
––– 47 –––
––– 42 –––
––– 5020 –––
––– 450 –––
––– 34 –––
––– 230 –––
––– 170 –––
S V_DS = 50V, I_D = 16A
I_D = 26A
f nC VDS = 480V
V_GS = 10V, See Fig. 7 & 15
V_DD = 300V
ns I_D = 26A
R_G = 4.3Ω
f V_GS = 10V, See Fig. 11a & 11b
V_GS = 0V
V_DS = 25V
pF ƒ = 1.0MHz, See Fig. 5
g V_GS = 0V,V_DS = 0V to 480V
(Energy Related)
Avalanche Characteristics
Symbol
E_AS
I_AR
E_AR
d ^Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
™ Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
R_θJC
R_θCS
R_θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
570
26
47
Max.
0.27
–––
40
Units
mJ
A
mJ
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting T_J = 25°C, L = 1.7mH, R_G = 25Ω,
I_AS = 26A, dv/dt = 21V/ns. (See Figure 12a)
ƒ I_SD ≤ 26A, di/dt ≤ 480A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C.
2
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
C_oss eff.(ER) is a fixed capacitance that stores the same energy
as C_oss while V_DS is rising from 0 to 80% V_DSS.
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