IRF8910PBF Datasheet, PDF (6/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF8910PbF
40.00
30.00
80
ID = 10A
70
60
50
ID
TOP 3.4A
4.9A
BOTTOM 8.2A
20.00
TJ = 125°C
40
30
10.00
TJ = 25°C
20
10
0.00
3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
VDS
L
RG
2V0GVS
tp
D.U.T
I_AS
0.01Ω
15V
DRIVER
+
- ^VDD
A
I _AS
V(BR)DSS
tp
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
V_GS
3mA
D.U.T.
+
-V^DS
Fig 14. Unclamped Inductive Test Circuit
and Waveform
L_D
V_DS
+
V_DD -
I_G
I_D
Current Sampling Resistors
Fig 15. Gate Charge Test Circuit
V_DS
90%
V_GS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 16. Switching Time Test Circuit
6
10%
V_GS
t_{d(on) tr}
t_{d(off) tf}
Fig 17. Switching Time Waveforms
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