IRF8910PBF Datasheet, PDF (4/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF8910PbF
10000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
Coss
100
1
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
6.0
ID= 8.2A
5.0
4.0
VDS= 16V
VDS= 10V
3.0
2.0
1.0
0.0
0 1 2 3 4 5 6 7 8 9 10
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100.00
10.00
TJ = 150°C
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
1.00
TJ = 25°C
0.10
0.01
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
100µsec
1msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10msec
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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