IRF8910PBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

PD -95673
IRF8910PbF
Applications
l Dual SO-8 MOSFET for POL
converters in desktop, servers,
graphics cards, game consoles
and set-top box
l Lead-Free
V_DSS
20V
S1
Benefits
G1
l Very Low R_DS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
S2
l Fully Characterized Avalanche Voltage
G2
and Current
l 20V V_GS Max. Gate Rating
HEXFET^® Power MOSFET
R_DS(on) max
I_D
: 13.4m @V_GS = 10V 10A
1
8
D1
2
7
D1
3
6
D2
4
5
D2
Top View
SO-8
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Power Dissipation
Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R_θJL
Junction-to-Drain Lead
R_θJA
fg Junction-to-Ambient
Notes  through … are on page 10
www.irf.com
Max.
20
± 20
10
8.3
82
2.0
1.3
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
8/11/04