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| IRF8910PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF8910PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)/âTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
20
âââ
âââ
âââ
1.65
âââ
âââ
0.015
10.7
14.6
âââ
-4.8
âââ
âââ
13.4
18.3
2.55
âââ
V VGS = 0V, ID = 250µA
V/°C
mâ¦
Reference to 25°C, ID = 1mA
e VGS = 10V, ID = 10A
e VGS = 4.5V, ID = 8.0A
V VDS = VGS, ID = 250µA
mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 16V, VGS = 0V
âââ âââ 150
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
24 âââ âââ
âââ 7.4 11
S VDS = 10V, ID = 8.2A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 2.4 âââ
âââ 0.80 âââ
âââ 2.5 âââ
âââ 1.7 âââ
VDS = 10V
nC VGS = 4.5V
ID = 8.2A
See Fig. 6
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 3.3 âââ
Qoss
td(on)
tr
td(off)
tf
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
âââ 4.4 âââ
âââ 6.2 âââ
âââ 10 âââ
âââ 9.7 âââ
âââ 4.1 âââ
nC VDS = 10V, VGS = 0V
VDD = 10V, VGS = 4.5V
ns ID = 8.2A
Clamped Inductive Load
Ciss
Input Capacitance
âââ 960 âââ
VGS = 0V
Coss
Output Capacitance
âââ 300 âââ pF VDS = 10V
Crss
Reverse Transfer Capacitance
âââ 160 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
19
8.2
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
âââ âââ 2.5
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ âââ 82
âââ âââ 1.0
âââ 17 26
âââ 6.5 9.7
A showing the
integral reverse
G
e p-n junction diode.
S
V TJ = 25°C, IS = 8.2A, VGS = 0V
e ns TJ = 25°C, IF = 8.2A, VDD = 10V
nC di/dt = 100A/µs
2
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