IRF8910PBF Datasheet, PDF (5/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF8910PbF
10
9
8
7
6
5
4
3
2
1
0
25
50
75
100 125 150
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
2.5
2.0
ID = 250µA
1.5
1.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10
1
0.1
0.01
1E-006
0.20
0.10
0.05
0.02
0.01
Ri (°C/W) τi (sec)
R_1R1
R_2R2
R_3R3
R_4R4
R_5R5
1.2647
0.000091
τ_{J τJ}
τ_{1 τ1}
τ_{CτC 2.0415}
0.000776
τ_{2 τ2}
τ_3τ3
τ_{4 τ4}
τ_{5 τ5}
18.970 0.188739
SINGLE PULSE
( THERMAL RESPONSE )
Ci= τi/Ri
Ci= τi/Ri
Notes:
23.415
16.803
0.757700
25.10000
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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