IRF8707PBF Datasheet, PDF (6/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF8707PbF
35
250
ID = 11A
30
200
25
150
20
TJ = 125°C
100
15
10
TJ = 25°C
50
ID
TOP
0.67A
0.82A
BOTTOM 8.80A
5
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V(BR)DSS
15V
tp
VDS
L
DRIVER
0
RG
20V
tp
D.U.T
IAS
0.01Ω
+
- ^VDD
A
I _AS
Fig 14. Unclamped Inductive Test Circuit
and Waveform
Id
Vgs
L
DUT
2¹0^KK
S
VCC
Fig 15. Gate Charge Test Circuit
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 16. Gate Charge Waveform
6
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