IRF8707PBF Datasheet, PDF (5/9 Pages) International Rectifier – HEXFET Power MOSFET

12
10
8
6
4
2
0
25
50
75
100 125 150
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
IRF8707PbF
2.5
2.2
1.9
ID = 250µA
1.6
ID = 25µA
1.3
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.1
0.01
0.001
1E-006
P_DM
R _{1R 1}
R _{2R 2}
R _{3R 3}
R _{4R 4}
Ri (°C/W) τi (sec)
t₁
τ_{J τJ}
τ_{1 τ1}
τ_AτA 2.2284 0.000169
τ_{2 τ2}
τ_{3 τ3}
τ_{4 τ4}
7.0956 0.013738
Notes:
t2
Ci= τi/Ri
25.4895 0.68725 _{1. Duty factor D = t1 / t 2}
Ci= τi/Ri
15.1981 25.8
2. Peak T J = P DM x Z thJA + TA
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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100
5