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| IRF8707PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF8707PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
30
âââ
âââ
âââ
1.35
âââ
âââ
âââ
âââ
âââ
âââ
0.022
9.3
14.2
1.80
-5.8
âââ
âââ
âââ
âââ
âââ
âââ
11.9
17.5
2.35
âââ
1.0
150
100
-100
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
e m⦠VGS = 10V, ID = 11A
e VGS = 4.5V, ID = 8.8A
V VDS = VGS, ID = 25µA
mV/°C VDS = VGS, ID = 25µA
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
25 âââ âââ
âââ 6.2 9.3
S VDS = 15V, ID = 8.8A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 1.4 âââ
VDS = 15V
âââ 0.7 âââ nC VGS = 4.5V
âââ 2.2 âââ
ID = 8.8A
âââ 1.9 âââ
See Figs. 15 & 16
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 2.9 âââ
Qoss
Output Charge
Rg
Gate Resistance
âââ 3.7 âââ nC VDS = 16V, VGS = 0V
âââ 2.2 3.7 â¦
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
âââ 6.7 âââ
VDD = 15V, VGS = 4.5V
âââ 7.9 âââ ns ID = 8.8A
âââ 7.3 âââ
RG = 1.8â¦
âââ 4.4 âââ
See Fig. 18
Ciss
Input Capacitance
âââ 760 âââ
VGS = 0V
Coss
Output Capacitance
âââ 170 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 82 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
53
8.8
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ
MOSFET symbol
D
3.1 A
showing the
âââ âââ
88
âââ âââ 1.0
integral reverse
G
A
e p-n junction diode.
S
V TJ = 25°C, IS = 8.8A, VGS = 0V
âââ 12
âââ 13
18
20
e ns TJ = 25°C, IF = 8.8A, VDD = 15V
nC di/dt = 300A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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