IRF8707PBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF8707PbF
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = C _gd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
5.0
ID= 8.8A
4.0
3.0
VDS= 24V
VDS= 15V
2.0
1.0
0.0
012345678
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
10
TJ = 25°C
1
0.1
0.4
VGS = 0V
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1msec
10msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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