IRF8707PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

PD - 96118A
IRF8707PbF
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook
Processor Power
l Control MOSFET for Isolated
DC-DC Converters in Networking
Systems
Benefits
l Very Low Gate Charge
l Very Low R_DS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V V_GS Max. Gate Rating
l 100% tested for Rg
l Lead-Free
V_DSS
30V
HEXFET^® Power MOSFET
R_DS(on) max
Qg
: 11.9m @V_GS = 10V 6.2nC
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Top View
SO-8
Description
The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Power Dissipation
Power Dissipation
30
V
± 20
11
9.1
A
88
2.5
W
1.6
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.02
-55 to + 150
W/°C
°C
Thermal Resistance
R_θJL
R_θJA
g ^Parameter
Junction-to-Drain Lead
fg Junction-to-Ambient
Notes  through … are on page 9
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
10/24/07