GA500TD60U Datasheet, PDF (6/10 Pages) International Rectifier – HALF-BRIDGE IGBT DUAL INT-A-PAK

GA500TD60U
 250 RG1==15OΩh;mRG2 = 0 Ω
T _J = 125° C
V_CC = 360V
200 ^VGE ^{= 15V}
150
100
50
0
0
200
400
600
800
1000
I _C, Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
1400
V_GE = 20V
T J = 125°C
1200 V _CE measured at terminal (Peak Voltage)
1000
800
SAFE OPERATING AREA
600
400
200
0
A
0
100 200 300 400 500 600 700
V_CE , Collector-to-Emitter Voltage (V)
Fig. 12 - Reverse Bias SOA
30000
I_F = 1000A
I_F = 500A
I_F = 250A
20000
100
T_J = 1 25°C
T_J = 25°C
10
0.0
2.0
4.0
6.0
F o rw ard V o lta g e D ro p - V _FM (V )
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
6
10000
V_R = 3 6 0 V
T_J = 125°C
T_J = 25°C
0
500
1000
1500
2000
di_f/dt - (A/µs)
Fig. 14 - Typical Stored Charge vs. di_f/dt
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