GA500TD60U Datasheet, PDF (3/10 Pages) International Rectifier – HALF-BRIDGE IGBT DUAL INT-A-PAK

250
200
150
100
50
0
0.1
GA500TD60U
F_So_qr_ub_ao_reth_w: _ave:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
GV_Ca_Ete=d6r0iv%e aRsatsepde c ifie d
P o w e r D is s ip a tio n = 270W
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I_RMS of fundamental)
1000
 T_J = 12550 ^oC
 T_J = 25 ^oC
100
10
1.0
 VGE = 15V
8200µµss PULSE WIDTH
1.5
2.0
2.5
3.0
V_CE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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1000
 T_J = 12550 ^oC
100
 T_J = 25 ^oC
 VCEC = 5205V
850µµss PULSE WIDTH
10
5
6
7
8
9
10
11
V_GE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3