GA500TD60U Datasheet, PDF (2/10 Pages) International Rectifier – HALF-BRIDGE IGBT DUAL INT-A-PAK

GA500TD60U
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)CES Collector-to-Emitter Breakdown Voltage 600 — —
V_GE = 0V, I_C = 1mA
V_CE(on)
Collector-to-Emitter Voltage
— 1.9 2.4
V_GE = 15V, I_C = 500A
— 2.0 — V V_GE = 15V, I_C = 500A, T_J = 125°C
V_GE(th)
Gate Threshold Voltage
3.0 — 6.0
I_C = 3.0mA
∆V_GE(th)/∆T_J Temperature Coeff. of Threshold Voltage — -11 — mV/°C V_CE = V_GE, I_C = 3.0mA
g_fe
Forward Transconductance T
— 244 — S V_CE = 25V, I_C = 500A
I_CES
Collector-to-Emitter Leaking Current
— — 2.0 mA V_GE = 0V, V_CE = 600V
— — 20
V_GE = 0V, V_CE = 600V, T_J = 125°C
V_FM
Diode Forward Voltage - Maximum
— 4.0 — V I_F = 500A, V_GE = 0V
— 4.1 —
I_F = 500A, V_GE = 0V, T_J = 125°C
I_GES
Gate-to-Emitter Leakage Current
— — 250 nA V_GE = ±20V
Dynamic Characteristics - T_J = 125°C (unless otherwise specified)
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
C_ies
C_oes
C_res
t_rr
I_rr
Q_rr
di_(rec)M_/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During t_b
Min. Typ. Max. Units
Conditions
— 2100 3200
V_CC = 400V
— 292 440 nC I_C = 500A
— 1050 1580
T_J = 25°C
— 1900 —
R_G1 = 15Ω, R_G2 = 0Ω,
— 430 — ns I_C = 500A
— 800 —
— 190 —
V_{CC =} 360V
V_GE = ±15V
— 41 — mJ See Fig.17 through Fig.21
— 56 —
— 97 110
— 46800 —
V_GE = 0V
— 2920 —
— 600 —
pF V_CC = 30V
ƒ = 1 MHz
— 246 —
— 144 —
— 17655 —
— 1386 —
ns
A
µC
A/µs
I_C = 500A
R_G1 = 15Ω
R_G2 = 0Ω
V_CC = 360V
di/dt=1300A/µs
2
www.irf.com