GA500TD60U Datasheet, PDF (4/10 Pages) International Rectifier – HALF-BRIDGE IGBT DUAL INT-A-PAK

GA500TD60U
600
500
400
300
200
100
0
25
50
75
100
125
150
T_C , Case Temperature ( ° C)
 2.5
V_GE = 15V
80 us PULSE WIDTH
2.0
 I_C^IC=⁼5⁵0⁰0^0AA
 I_C = 250 A
1.5
 I_C = 125 A
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
0.1
D = 0 .5 0
0.01
0.001
0.0001
0.20
0.10
P_DM
0.05
0.0 2
0.01
S IN G LE P U LS E
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak TJ = P_DM x Z _thJC + T_C
0.001
0.01
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
A
1000
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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