GA500TD60U Datasheet, PDF (5/10 Pages) International Rectifier – HALF-BRIDGE IGBT DUAL INT-A-PAK

100000
80000
60000
 ^{VGE = 0V, f = 1MHz}
C_ies = C_ge + C_{gc ,} C_ce SHORTED
C_res = C_gc
C_oes = C_ce + C_gc
 C_ies
40000
20000
C _oes
C _res
0
1
10
100
V_CE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
GA500TD60U
 20
V_CC = 400V
I _C = 500A
16
12
8
4
0
0
400 800 1200 1600 2000 2400
Q_G , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
 ^{200 VCC = 360V}
V_GE = 15V
180
T_J
I_C
= 125 ^° C
= 520500AA
160
140
120
100
80
0
10
20
30
40
50
R_G , Gate Resistance (O(hmΩ))
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
 1000 RGG1=1=5OΩh;RmG2 = 0 Ω
V_GE = 15V
V_CC = 360V
 I_C^IC =^{= 5}5⁰0⁰0^AA
100
 I_C = 250 A
 I_C = 125 A
10
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5