AUIRFP2602 Datasheet, PDF (6/10 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRFP2602
1600
1400
1200
1000
ID
TOP 54A
95A
BOTTOM 180A
800
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. Drain Current
1000
Duty Cycle = Single Pulse
100
0.05
0.10
0.01
5.0
4.0
3.0
ID = 250μA
ID = 1.0mA
2.0 ^{ID = 1.0A}
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-01
400
TOP
Single Pulse
350
BOTTOM 1.0% Duty Cycle
ID = 180A
300
250
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
6
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T_jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT_jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. P_{D (ave)} = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I_av = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
T_jmax (assumed as 25°C in Figure 14, 15).
t_{av =} Average time in avalanche.
D = Duty cycle in avalanche = t_av ·f
Z_thJC(D, t_av) = Transient thermal resistance, see figure 11)
P_{D (ave)} = 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC
I_av = 2DT/ [1.3·BV·Z_th]
E_{AS (AR)} = P_{D (ave)}·t_av
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