AUIRFP2602 Datasheet, PDF (5/10 Pages) International Rectifier – HEXFET® Power MOSFET

100000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
Ciss
Coss
Crss
12.0
10.0
ID= 180A
8.0
6.0
4.0
AUIRFP2602
VDS= 19V
VDS= 12V
2.0
1000
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
0.0
0
50 100 150 200 250 300
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
10000
400
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
350
Limited By Package
1000
100μsec
300
1msec
250
100
200
10msec
10
Tc = 25°C
DC
Tj = 175°C
Single Pulse
1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 10. Maximum Drain Current vs. Case Temperature
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci i/Ri
R_2R2
τ_{2 τ2}
R_3R3
R_4R4
τ_Cτ
Ri (°C/W)
0.0224
0.0641
τi (sec)
0.00002
0.000095
τ_{3 τ3}
τ_{4 τ4}
0.1778 0.00169
0.1362 0.013883
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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