AUIRFP2602 Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRFP2602
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
24 ––– ––– V V_GS = 0V, I_D = 250μA
e ^{––– 0.02 ––– V/°C Reference to 25°C, ID = 1mA}
––– 1.25 1.6 mΩ V_GS = 10V, I_D = 180A
V_GS(th)
Gate Threshold Voltage
2.0 ––– 4.0
V V_DS = V_GS, I_D = 250μA
gfs
Forward Transconductance
230 ––– ––– S V_DS = 10V, I_D = 180A
I_DSS
Drain-to-Source Leakage Current
––– ––– 20 μA V_DS = 24V, V_GS = 0V
––– ––– 250
V_DS = 24V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 200 nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Total Gate Charge
––– 260 390
Q_gs
Gate-to-Source Charge
––– 72 ––– nC
Q_gd
Gate-to-Drain ("Miller") Charge
––– 100 –––
t_d(on)
Turn-On Delay Time
––– 70 –––
t_r
Rise Time
––– 490 –––
t_d(off)
Turn-Off Delay Time
––– 150 ––– ns
t_f
Fall Time
––– 270 –––
L_D
Internal Drain Inductance
––– 5.0 –––
nH
L_S
Internal Source Inductance
––– 13 –––
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 11220 –––
––– 4800 –––
––– 2660 ––– pF
––– 13020 –––
––– 4800 –––
––– 6710 –––
I_D = 180A
e ^{VDS = 12V}
V_GS = 10V
V_DD = 12V
I_D = 180A
e ^{RG = 2.5 Ω}
V_GS = 10V
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
V_GS = 0V
V_DS = 25V
ƒ = 1.0KHz
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0KHz
f ^{VGS = 0V, VDS = 19V, ƒ = 1.0KHz}
V_GS = 0V, V_DS = 0V to 19V
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
j ––– ––– 400
MOSFET symbol
A showing the
––– ––– 1580
integral reverse
––– ––– 1.3
p-n junction diode.
e V T_J = 25°C, I_S = 180A, V_GS = 0V
––– 55
––– 56
83
84
e ^{ns TJ = 25°C, IF = 180A, VDD = 12V}
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.025mH,
R_G = 25Ω, I_AS = 180A, V_GS =10V.
Part not recommended for use above this value.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
„ C_oss eff. is a fixed capacitance that gives the same charging
time as C_oss while V_DS is rising from 0 to 80% V_DSS .
… Limited by T_Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
† This value determined from sample failure population. 100%
tested to this value in production.
‡ R_θ is measured at T_J approximately 90°C.
ˆ Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 180A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
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