AUIRFP2602 Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD - 96420
Features
l Advanced Process Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features combine
to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
AUIRFP2602
HEXFET^® Power MOSFET
D
V_(BR)DSS
24V
R_DS(on) typ. 1.25mΩ
G
max. 1.6mΩ
j I_{D (Silicon Limited)} 380A
S
I_{D (Package Limited)} 180A
D
G
G a te
S
D
G
TO-247AD
D
D rain
S
S o u rc e
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (Tested )
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
i Junction-to-Case
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
i Junction-to-Ambient (PCB Mount, steady state)
Max.
j 380
j 270
180
1580
380
2.5
± 20
400
1011
See Fig.17a, 17b, 14, 15
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
0.24
–––
Max.
0.40
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
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11/17/11