AUIRFP2602 Datasheet, PDF (4/10 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRFP2602
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
4.5V
1
0.1
≤60μs PULSE WIDTH
Tj = 25°C
1
10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
4.5V
10
0.1
≤60μs PULSE WIDTH
Tj = 175°C
1
10
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
300
TJ = 25°C
250
200
TJ = 175°C
150
100
VDS = 10V
≤60μs PULSE WIDTH
1.0
23456789
50
0
0
VDS = 10V
380μs PULSE WIDTH
40
80
120 160 200
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance vs. Drain Current
1000
100
TJ = 175°C
10
TJ = 25°C
1.8
ID = 180A
1.6 ^{VGS = 10V}
1.4
1.2
1
0.1
0.0
VGS = 0V
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
Fig 5. Typical Source-Drain Diode Forward Voltage
4
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
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