JANSR2N7550T1 Datasheet, PDF (5/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

Pre-Irradiation
IRHMS597160, JANSR2N7550T1
10000
8000
6000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
4000
C_oss
2000
C_rss
0
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = -45A}
16
12
V_DS =-80V
V_DS =-50V
V_DS =-20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80 120 160 200 240
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 150° C
T_J = 25° C
10
1
0.1
0.0
V_GS = 0 V
1.5
3.0
4.5
6.0
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
100µs
10
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
10ms
100
-VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5