JANSR2N7550T1 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

PD-94283E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597160
JANSR2N7550T1
100V, P-CHANNEL
REF: MIL-PRF-19500/713
5 TECHNOLOGY
™
Product Summary
Part Number Radiation Level RDS(on)
IRHMS597160 100K Rads (Si) 0.05Ω
IRHMS593160 300K Rads (Si) 0.05Ω
ID
-45A
-45A
QPL Part Number
JANSR2N7550T1
JANSF2N7550T1
Low-Ohmic
TO-254AA
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)).The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n Single Event Effect (SEE) Hardened
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
n High Electrical Conductive Package
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC=25°C
ID @ VGS = -12V, TC=100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-45
-28.5
A
-180
208
W
1.67
W/°C
±20
V
480
mJ
-45
A
20.8
mJ
-6.0
V/ns
-55 to 150
°C
300 (0.063in./1.6mm from case for 10s)
9.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
12/13/07