JANSR2N7550T1 Datasheet, PDF (4/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

IRHMS597160, JANSR2N7550T1
Pre-Irradiation
1000
100
VGS
TOP -15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
-5.0V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP -15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
-5.0V
10
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
T_J = 25° C
100
T_J = 150° C
10
5.0
V DS = ₁-5₅0V
20µs PULSE WIDTH
5.5
6.0
6.5
7.0
-V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
2.5 _{ID = -45A}
2.0
1.5
1.0
0.5
V_GS = -12V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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