IRF7530 Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)

5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
T_C , Case Temperature ( ^°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF7530
80
 ^TOP
ID
2.2A
4.0A
BOTTOM 5.0A
60
40
20
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
1000
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
0.1
0.00001
 ^{SINGLE PULSE}
(THERMAL RESPONSE)
 PDM
t₁
t₂
 Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T _J = P _DM x Z _thJA + T_A
0.0001
0.001
0.01
0.1
1
10
t₁, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5