IRF7530 Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)

IRF7530
2000
 VGS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
1600
C_oss = C_ds + C_gd
 C_iss
1200
800
400
0
1
C _oss
C _rss
10
100
V_DS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10 _{ ID = 55.40A}
8
6
 ^{VDS = 16V}
V_DS = 10V
V_DS = 4V
4
2
0
0
5
10
15
20
25
30
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
 T_J = 150^° C
10
 T_J = 25 ^° C
 ^V GS ^{= 0 V}
1
0.5
1.0
1.5
2.0
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
 OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
 10us
10
 100us
 1ms
1
 10ms
 ^{TA = 25°C}
T_J = 150° C
Single Pulse
0.1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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