IRF7530 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)

PD-93760B
IRF7530
q Trench Technology
q Ultra Low On-Resistance
S1
q Dual N-Channel MOSFET
G1
q Very Small SOIC Package
q Low Profile (<1.1mm)
S2
q Available in Tape & Reel
G2
Description
New trench HEXFET^ power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8 package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
HEXFET^® Power MOSFET
1
8
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7
3
6
4
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D1
D1
V_DSS = 20V
D2
D 2 _{RDS(on) = 0.030Ω}
Micro8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
E_AS
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Pulsed Drain Current Q
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche EnergyT
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
5.4
4.3
40
1.3
0.80
10
33
± 12
-55 to + 150
Units
V
A
W
mW/°C
mJ
V
°C
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-AmbientS
Max.
100
Units
°C/W
1
02/16/01