IRF7530 Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)

100
^TOP
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
IRF7530
100
 ^TOP
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
2.25V
10
0.1
 20µs PULSE WIDTH
TJ = 25 ^°C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2.25V
10
0.1
 20µs PULSE WIDTH
TJ = 150 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
 T_J = 25^°C
 T_J = 150^° C
10
2.0
 V DS= 15V
20µs PULSE WIDTH
2.5
3.0
3.5
4.0
4.5
V_GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 _{ ID = 5.0A}
1.5
1.0
0.5
 VGS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3