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IRF7530 Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)
IRF7530
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
20 ––– ––– V VGS = 0V, ID = 250uA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.01 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.030
––– ––– 0.045
Ω
VGS = 4.5V, ID = 5.4A R
VGS = 2.5V, ID = 4.6A R
VGS(th)
Gate Threshold Voltage
0.60 ––– 1.2 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
13 ––– ––– S VDS = 10V, ID = 5.4A
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 25
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 12V
––– ––– -100
VGS = -12V
Qg
Total Gate Charge
––– 18 26
ID = 5.4A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
––– 3.4 5.1
––– 3.4 5.1
nC VDS = 16V
VGS = 4.5V R
td(on)
Turn-On Delay Time
––– 8.5 –––
VDD = 10V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 11 ––– ns ID = 1.0A
––– 36 –––
RG = 6.0Ω
––– 16 –––
RD = 10Ω R
Ciss
Input Capacitance
––– 1310 –––
VGS = 0V
Coss
Output Capacitance
––– 180 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 150 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Q
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
19
13
Max.
1.3
40
1.2
29
20
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 1.3A, VGS = 0V R
TJ = 25°C, IF = 1.3A
di/dt = 100A/µs R
Notes:
Q Repetitive rating; pulse width limited by
max. junction temperature.
R Pulse width ≤ 400µs; duty cycle ≤ 2%.
S When mounted on 1 inch square copper board, t<10 sec
T Starting TJ = 25°C, L = 2.6mH
RG = 25Ω, IAS = 5.0A. (See Figure 10)
2
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