IRF6641PBF_15 Datasheet, PDF (5/10 Pages) International Rectifier – Latest MOSFET silicon technology

200
180
ID = 5.5A
160
140
120
TJ = 125°C
100
80
60
TJ = 25°C
40
20
0
4
6
8
10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance vs. Gate Voltage
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
I_AS
0.01
+
-
VDD
A
Fig 15a. Unclamped Inductive Test Circuit
V_(BR)DSS
tp
100
TJ = 25°C
90
IRF6641TRPbF
80
Vgs = 7.0V
Vgs = 8.0V
70
Vgs = 10V
Vgs = 15V
60
50
0
10 20 30 40 50 60
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
200
180
ID
TOP
3.7A
160
5.7A
140
BOTTOM 11A
120
100
80
60
40
20
0
25
50
75
100
125
150
Starting T _J , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
I _AS
Fig 15b. Unclamped Inductive Waveforms
Fig 16a. Switching Time Test Circuit
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Fig 16b. Switching Time Waveforms
July 1, 2013