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| IRF6641PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Latest MOSFET silicon technology | |||
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IRF6641TRPbF
Thermal Resistance
Rï±JA
Rï±JA
Rï±JA
Rï±JC
Rï±J-PCB
Parameter
Junction-to-Ambient ï
Junction-to-Ambient ï
Junction-to-Ambient ï
Junction-to-Case ïï
Junction-to-PCB Mounted
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ïBVDSS/ïTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
ïVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
200
âââ
âââ
3.0
âââ
âââ
âââ
âââ
âââ
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Forward Transconductance
13
Qg
Total Gate Charge
âââ
Qgs1
Pre-VthGate-to-Source Charge
âââ
Qgs2
Post-Vth Gate-to-Source Charge
âââ
Qgd
Gate-to-Drain Charge
âââ
Qgodr
Gate Charge Overdrive
âââ
Qsw
Switch Charge (Qgs2 + Qgd)
âââ
td(on)
Turn-On Delay Time
âââ
tr
Rise Time
âââ
td(off)
Turn-Off Delay Time
âââ
tf
Fall Time
âââ
Ciss
Input Capacitance
âââ
Coss
Output Capacitance
âââ
Crss
Reverse Transfer Capacitance
âââ
Coss
Output Capacitance
âââ
Coss
Output Capacitance
âââ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ï
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
12.5
20
âââ
1.0
Max.
45
âââ
âââ
1.4
âââ
Units
°C/W
Typ.
âââ
0.23
51
4.0
-11
âââ
âââ
âââ
âââ
Max.
âââ
âââ
59.9
4.9
âââ
20
250
100
-100
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1.0mA
mï VGS = 10V, ID = 5.5A ï
V VDS = VGS, ID = 150µA
mV/°C
µA VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ=125°C
nA VGS = 20V
VGS = -20V
âââ âââ
34
48
8.7 âââ
1.9 âââ
9.5 14
14 âââ
11 âââ
16 âââ
11 âââ
31 âââ
6.5 âââ
2290 âââ
240 âââ
46 âââ
1780 âââ
100 âââ
S VDS = 10V, ID = 5.5A
VDS = 100V
nC VGS = 10V
ID = 5.5A
VDS = 16V, VGS = 0V
VDD = 100V, VGS = 10V
ns ID = 5.5A
RG = 6.2ï
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS=0V, VDS=1.0V, Æ=1.0MHz
VGS=0V, VDS=160V, Æ=1.0MHz
Typ.
âââ
âââ
âââ
85
320
Max.
26
37
1.3
130
480
Units
Conditions
A MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = 5.5A, VGS = 0V ï
ns TJ = 25°C, IF = 5.5A,VDD = 100V
nC di/dt = 100A/µs ï
2 www.irf.com © 2013 International Rectifier
July 1, 2013
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