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| IRF6641PBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – Latest MOSFET silicon technology | |||
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DIGITAL AUDIO MOSFET
IRF6641TRPbF
Features
ï·ï Latest MOSFET silicon technology
ï·ï Key parameters optimized for Class-D audio amplifier
applications
ï·ï Low RDS(on) for improved efficiency
ï·ï Low Qg for better THD and improved efficiency
ï·ï Low Qrr for better THD and lower EMI
ï·ï Low package stray inductance for reduced ringing and lower
EMI
ï·ï Can deliver up to 400 W per channel into 8ïï load in half-bridge
configuration amplifier
ï·ï Dual sided cooling compatible
ï·ï Compatible with existing surface mount technologies
ï·ï RoHS compliant, halogen-free
ï·ï Lead-free (qualified up to 260°C reflow)
Key Parameters
VDS
200 V
RDS(ON) typ. @ VGS = 10V 51 mï
Qg typ.
34 nC
RG(int) typ.
1.0 ï
MZ
DirectFET® ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details)
SQ
SX
ST
SH
MQ
MX
MT
MN
MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and
internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6641PbF device utilizes DirectFET® packaging technology. DirectFET® packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET® package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET® package
also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.
These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Base part number
IRF6641PbF
Package Type
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF6641TRPbF
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V ï
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V ï
Continuous Drain Current, VGS @ 10V ï
Pulsed Drain Current ïï
PD @TC = 25°C
Power Dissipation
PD @TA = 25°C
PD @TA = 70°C
EAS
Power Dissipation ï
Power Dissipation ï
Single Pulse Avalanche Energy ï
IAR
Avalanche Current ï
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes ï through ï are on page 9
1 www.irf.com © 2013 International Rectifier
Max.
±20
26
4.6
3.7
37
89
2.8
1.8
46
11
0.022
-40 to + 150
Units
V
A
W
mJ
A
W/°C
°C
July 1, 2013
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