IRF6641PBF_15 Datasheet, PDF (3/10 Pages) International Rectifier – Latest MOSFET silicon technology

100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
10
7.0V
1
0.1
60µs PU LSE W IDTH
Tj = 25°C
1
10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
10
TJ = 150°C
TJ = 25°C
TJ = -40°C
1
0.1
2
VDS = 10V
60µs PULSE WIDTH
4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
Coss
100
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
IRF6641TRPbF
7.0V
1
0.1
0.1
60µs PU LSE W ID TH
Tj = 150°C
1
10
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.5
ID = 5.5A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
12.0
ID= 5.5A
10.0
VDS= 160V
VDS= 100V
8.0
VDS= 40V
6.0
4.0
2.0
0.0
0
5 10 15 20 25 30 35 40
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs Gate-to-Source Voltage
July 1, 2013