IRF6641PBF_15 Datasheet, PDF (4/10 Pages) International Rectifier – Latest MOSFET silicon technology

100
TJ = 150°C
TJ = 25°C
TJ = -40°C
10
IRF6641TRPbF
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
1
0
0.0
VGS = 0V
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
5
1
0.1 _{Tc = 25°C}
Tj = 150°C
Single Pulse
0.01
0
1
10msec
100µsec
1msec
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
6.0
4
3
2
1
0
25
50
75
100
125
150
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs. Ambient Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
5.0
4.0
ID = 150µA
3.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Typical Threshold Voltage vs.
Junction Temperature
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 
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July 1, 2013