ISL75051SEH Datasheet, PDF (9/18 Pages) Intersil Corporation – 3A, Rad Hard, Positive, Ultra Low Dropout Regulator

ISL75051SEH
Low Dose Rate Post Radiation Characteristics T_A = +25°C, unless otherwise noted. This data is typical test data post
radiation exposure at a rate of 10mrad(Si)/s. This data is intended to show typical parameter shifts due to low dose rate radiation. (see Note 14).
These are not limits nor are they guaranteed. (Continued)
ITEM #
DESCRIPTION
CONDITION
0k RAD
50k RAD 100k RAD UNITS
30 DC Input Line Regulation
31 DC Output Load Regulation
32 DC Output Load Regulation
33 DC Output Load Regulation
34 Feedback Input Current
35 Ground Pin Current
36 Ground Pin Current
37 Ground Pin Current
38 Ground Pin Current
39 Ground Pin Current in Shutdown
40 Dropout Voltage
41 Dropout Voltage
42 Dropout Voltage
43 Output Short Circuit Current
44 Output Short Circuit Current
45 Output Short Circuit Current
46 Output Short Circuit Current
47 PSRR
48 Enable Rising Threshold
49 Enable Rising Threshold
50 Enable Falling Threshold
51 Enable Falling Threshold
52 Enable Pin Leakage Current
53 Enable Pin Leakage Current
54 Enable Hysterisis
55 Enable Hysterisis
56 Enable Pin Propagation Delay
57 PG Rising Threshold
58 PG Rising Threshold
59 PG Falling Threshold
60 PG Falling Threshold
61 PG Hysteresis
62 PG Hysteresis
63 PG Low Voltage
64 PG Low Voltage
65 PG Leakage Current
NOTE:
14. See the Radiation report.
V_OUT + 0.4V < V_IN < 6.0V, V_OUT = 5.0V
V_OUT = 1.5V; 0A < I_LOAD < 3.0A, V_IN = V_OUT + 0.4V
V_OUT = 1.8V; 0A < I_LOAD < 3.0A, V_IN = V_OUT + 0.4V
V_OUT = 5.0V; 0A < I_LOAD < 3.0A, V_IN = V_OUT + 0.4V
V_ADJ = 0.5V
V_OUT = 1.5V; I_LOAD = 0A, V_IN = 2.2V
V_OUT = 1.5V; I_LOAD = 3.0A, V_IN = 2.2V
V_OUT = 5.0V; I_LOAD = 0A, V_IN = 6.0V
V_OUT = 5.0V; I_LOAD = 3.0A, V_IN = 6.0V
ENABLE Pin = 0V, V_IN = 6.0V
I_LOAD = 1.0A, V_OUT = 2.5V
I_LOAD = 2.0A, V_OUT = 2.5V
I_LOAD = 3.0A, V_OUT = 2.5V
V_OUT = 0V, V_IN = 2.2V, R_SET = 5.11k
V_OUT = 0V, V_IN = 2.2V, R_SET = 511Ω
V_OUT = 0V, V_IN = 6.0V, R_SET = 5.11k
V_OUT = 0V, V_IN = 6.0V, R_SET = 511Ω
V_P-P = 300mV, f = 1kHz, I_LOAD = 3A; V_IN = 2.5V,
V_OUT = 1.8V
V_IN = 2.2V
V_IN = 6.0V
V_IN = 2.2V
V_IN = 6.0V
V_IN = 6.0V, EN = 0V
V_IN = 6.0V, EN = 6.0V
V_IN = 2.2V
V_IN = 6.0V
V_IN = 2.2V, EN rise to I_OUT rise
V_IN = 2.2V
V_IN = 6.0V
V_IN = 2.2V
V_IN = 6.0V
V_IN = 2.2V
V_IN = 6.0V
I_SINK = 1mA
I_SINK = 6mA
V_IN = 6.0V, PG = 6.0V
5.792850 5.296750 5.315300 mV
-1.525700 -1.571300 -1.219950 mV
-1.314200 -1.447200 -1.372050 mV
-5.026850 -5.007050 -4.816750 mV
-0.011650 -0.030300 -0.036550 µA
10.665000 10.658900 10.621750 mA
11.977100 12.015600 11.948450 mA
15.814550 15.840150 15.771750 mA
17.223200 17.224650 17.189200 mA
0.430300 0.601500 0.707900 µA
62.801250 62.431600 65.466000 mV
132.799650 133.294300 138.742500 mV
214.477050 213.033000 221.517950 mV
1.178050 1.199850 1.224300 A
5.838350 5.898050 5.750950 A
1.317450 1.338450 1.361150 A
6.375650 6.464150 6.539300 A
64.103100 67.373400 65.407000 db
0.867700 0.835700 0.827700 V
0.915800 0.905800 0.893800 V
0.681400 0.671300 0.661300 V
0.727500 0.715400 0.707400 V
-0.004900 -0.025200 -0.030100 µA
-0.009750 -0.024850 -0.029650 µA
184.368000 166.332000 168.336000 mV
188.377000 190.381000 188.377000 mV
304.015700 299.771700 296.604250 µs
88.455750 88.057850 88.741300 %
89.994350 89.499600 90.142250 %
85.755650 85.356800 85.996150 %
86.812350 86.316300 86.870500 %
2.701500 2.699650 2.745150 %
3.182050 3.183350 3.271700 %
31.560800 31.295600 31.212750 mV
177.500500 177.572900 175.997050 mV
0.017550 -0.000750 -0.002400 µA
9
FN8294.0
August 28, 2012