ISL78840ASEH Datasheet, PDF (6/15 Pages) Intersil Corporation – Radiation Hardened, High Performance Industry Standard Single-Ended Current Mode PWM Controller

ISL78840ASEH, ISL78841ASEH, ISL78843ASEH, ISL78845ASEH
Absolute Maximum Ratings
Supply Voltage V_DD Without Beam . . . . . . . . . . . . . . .GND -0.3V to +30.0V
Supply Voltage V_DD Under Beam . . . . . . . . . . . . . . . . .GND -0.3V to +14.7V
OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V to V_DD + 0.3V
Signal Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V to 6.0V
Peak GATE Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
ESD Rating
Human Body Model (Tested per JESD22-A114E) . . . . . . . . . . . . . . . . 2kV
Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . 200V
Latch Up (Tested per JESD-78B; Class 2, Level A) . . . . . . . . . . . . . . 100mA
Recommended Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to +125°C
Supply Voltage (Typical Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . 9V to 13.2V
Thermal Information
Thermal Resistance (Typical)
8 Ld Flatpack Package (Notes 3, 4)
θ_JA (°C/W) θ_JC (°C/W)
140
15
8 Ld SBDIP Package (Notes 3, 4)
98
15
Maximum Junction Temperature (Plastic Package) . . . . . . . . . . . .+150°C
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Radiation Information
Maximum Total Dose
Dose Rate = 50 - 100radSi/s . . . . . . . . . . . . . . . . . . . . . . . 100 krads (Si)
Dose Rate = 0.01rad(Si)/s (Note 6). . . . . . . . . . . . . . . . . . . . . 100 krad (Si)
SEB (No Burnout) (Note 6) . . . . . . . . . . . . . . . . . . . . . . . . . . 80Mev/mg/cm²
SEL (No latchup) (Note 6) . . . . . . . . . . . . . . . . . . . . . . . . . . 80Mev/mg/cm²
SET (Regulated V_OUT within ±3%) (Note 9) . . . . . . . . . . . . 40Mev/mg/cm²
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3. θ_JA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
4. For θ_JC, the "case temp" location is the center of the ceramic on the package underside.
5. All voltages are with respect to GND.
6. Product capability established by initial characterization. The “EH” version is acceptance tested on a wafer by wafer basis to 50 krad(Si) at low dose
rate.
Electrical Specifications Recommended operating conditions unless otherwise noted. Refer to Block Diagram and Typical Application
schematic on page 3 and page 4. V_DD = 13.2V, R_T = 10kΩ, C_T = 3.3nF, T_A = -55 to +125°C. Typical values are at T_A = +25°C. Boldface limits apply over
the operating temperature range, -55 to +125°C.
PARAMETER
TEST CONDITIONS
MIN
MAX
(Note 10)
TYP
(Note 10)
UNITS
UNDERVOLTAGE LOCKOUT
START Threshold
ISL78840A, ISL78841A
6.5
7.0
7.5
V
ISL78843A, ISL78845A
8.0
8.4
9.0
V
STOP Threshold
ISL78840A, ISL78841A
6.1
6.6
6.9
V
ISL78843A, ISL78845A
7.3
7.6
8.0
V
Hysteresis
ISL78840A, ISL78841A
-
0.4
-
V
ISL78843A, ISL78845A
-
0.8
-
V
Start-up Current, I_DD
Operating Current, I_DD
Operating Supply Current, I_D
REFERENCE VOLTAGE
V_DD < START Threshold
V_DD < START Threshold, 100krad
(Note 7)
Includes 1nF GATE loading
-
90
125
µA
-
300
500
µA
-
2.9
4.0
mA
-
4.75
5.5
mA
Overall Accuracy
Over line (V_DD = 9V to 13.2V), load of
4.925
5.000
5.050
V
1mA and 10mA, temperature
Long Term Stability
Current Limit, Sourcing
T_A = +125°C, 1000 hours (Note 8)
-
5
-20
-
-
mV
-
mA
Current Limit, Sinking
5
-
-
mA
CURRENT SENSE
Input Bias Current
Input Signal, Maximum
V_CS = 1V
-1.0
-
1.0
µA
0.97
1.00
1.03
V
6
FN7952.0
May 29, 2012