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| ISL70417SEH Datasheet, PDF (6/22 Pages) Intersil Corporation – Rad Hard 40V Quad Precision Low Power Operational Amplifiers | |||
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ISL70417SEH
Electrical Specifications VS ± 5V, VCM = 0, VO = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply over the operating
temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total
ionizing dose of 50krad(Si) with exposure a low dose rate of <10mrad(Si)/s.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
MAX
(Note 5)
TYP
(Note 5)
UNIT
VOS
Input Offset Voltage
10
150
µV
250
µV
TCVOS
IB
Offset Voltage Drift
Input Bias Current
0.1
-1
0.18
-5
1
µV/°C
1
nA
5
nA
TCIB
Input Bias Current Temperature Coefficient
IOS
Input Offset Current
-5
1
5
pA/°C
-1.5
0.3
1.5
nA
-3
3
nA
TCIOS
VCM
CMRR
Input Offset Current Temperature Coefficient
Input Voltage Range
Common-Mode Rejection Ratio
VCM = -3V to +3V
-3
0.42
-3
120
145
120
3
pA/°C
3
V
dB
dB
PSRR
Power Supply Rejection Ratio
VS = ±2.25V to ±5V
120
145
dB
120
dB
AVOL
VOH
Open-Loop Gain
Output Voltage High
VO = -3.0V to +3.0V
RL = 10kΩ to ground
RL = 10kΩ to ground
3,000 14,000
3.5
3.7
3.2
V/mV
V
V
RL = 2kΩ to ground
3.3
3.55
V
3.0
V
VOL
Output Voltage Low
RL = 10kΩ to ground
-3.7
-3.5
V
-3.2
V
RL = 2kΩ to ground
-3.55
-3.3
V
-3.0
V
IS
Supply Current/Amplifier
0.44
0.53
mA
0.68
mA
ISC
Short-Circuit Current
AC SPECIFICATIONS
43
mA
GBWP
enp-p
en
en
en
en
in
Gain Bandwidth Product
Voltage Noise
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Current Noise Density
AV = 1k, RL = 2kΩ
0.1Hz to 10Hz
f = 10Hz
f = 100Hz
f = 1kHz
f = 10kHz
f = 1kHz
1.5
0.25
12
8.6
8
8
0.1
MHz
µVP-P
nV/âHz
nV/âHz
nV/âHz
nV/âHz
pA/âHz
TRANSIENT RESPONSE
SR
Slew Rate, VOUT 20% to 80%
AV = 11, RL = 2kΩ, VO = 4VP-P
0.5
V/µs
6
July 2, 2012
FN7962.0
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