ISL70417SEH Datasheet, PDF (1/22 Pages) Intersil Corporation – Rad Hard 40V Quad Precision Low Power Operational Amplifiers

Rad Hard 40V Quad Precision Low Power Operational
Amplifiers
ISL70417SEH
The ISL70417SEH contains four very high precision amplifiers
featuring the perfect combination of low noise vs power
consumption. Low offset voltage, low I_BIAS current and low
temperature drift making them the ideal choice for applications
requiring both high DC accuracy and AC performance. The
combination of high precision, low noise, low power and small
footprint provides the user with outstanding value and flexibility
relative to similar competitive parts.
Applications for these amplifiers include precision active
filters, medical and analytical instrumentation, precision
power supply controls, and industrial controls.
The ISL70417SEH is offered in a 14 lead hermetic ceramic
flatpack package. The device is offered in an industry standard
pin configuration and operates over the extended temperature
range from -55°C to +125°C.
Applications
• Precision Instrumentation
• Spectral Analysis Equipment
• Active Filter Blocks
• Thermocouples and RTD Reference Buffers
• Data Acquisition
• Power Supply Control
Features
• Electrically Screened to DLA SMD# 5962-12228
• Low Input Offset Voltage . . . . . . . . . . . . . . . . . . ±110µV, Max.
• Superb Offset Temperature Coefficient . . . . . . 1µV/°C, Max.
• Input Bias Current. . . . . . . . . . . . . . . . . . . . . . . . . . ±5nA, Max.
• Input Bias Current TC . . . . . . . . . . . . . . . . . . . . ±5pA/°C, Max.
• Low Current Consumption . . . . . . . . . . . . . . . . . . . . . . . 440µA
• Voltage Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/√Hz
• Wide Supply Range . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 40V
• Operating Temperature Range. . . . . . . . . . .-55°C to +125°C
• Radiation Environment
- SEL/SEB LET_TH (V_S = ±20V). . . . . . . . . 73.9 MeV•cm²/mg
- Total Dose, High Dose Rate . . . . . . . . . . . . . . . 300krad(Si)
- Total Dose, Low Dose Rate . . . . . . . . . . . . . . . 100krad(Si) *
* Product capability established by initial characterization. The
EH version is acceptance tested on a wafer by wafer basis to
50krad(Si) at low dose rate.
C₁
8.2nF
V₊
-
R₁
R₂
V_IN
1.84k 4.93k
ISL70417SEH
+
3.3nF C₂
V_-
OUTPUT
SALLEN-KEY LOW PASS FILTER (f_C = 10kHz)
FIGURE 1. TYPICAL APPLICATION
6
4
2
GND
0
-2
BIAS
-4
-6 _{VS = ±15V}
-8
0
50
100
150
200
250
300
krad(Si)
FIGURE 2. V_OS SHIFT vs HIGH DOSE RATE RADIATION
July 2, 2012
1
FN7962.0
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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