ISL70417SEH Datasheet, PDF (19/22 Pages) Intersil Corporation – Rad Hard 40V Quad Precision Low Power Operational Amplifiers

ISL70417SEH
Package Characteristics
Weight of Packaged Device
0. 6043 Grams (Typical)
Lid Characteristics
Finish: Gold
Potential: Unbiased
Case Isolation to Any Lead: 20 x 10⁹ Ω (min)
Die Characteristics
Die Dimensions
2028µm x 2568µm (80mils x 101mils)
Thickness: 483µm ± 25µm (19mils ± 1 mil)
Interface Materials
GLASSIVATION
Type: Nitrox
Thickness: 15kÅ
Metallization Mask Layout
TOP METALLIZATION
Type: AlCu (99.5%/0.5%)
Thickness: 30kÅ
BACKSIDE FINISH
Silicon
PROCESS
Dielectrically Isolated Complementary Bipolar - PR40
ASSEMBLY RELATED INFORMATION
SUBSTRATE POTENTIAL
Floating
ADDITIONAL INFORMATION
WORST CASE CURRENT DENSITY
< 2 x 10⁵ A/cm²
-IN_A OUT_A
OUT_D -IN_D
+IN_A
+IN_D
PLACE HOLDER
V+
V-
+IN_B
+IN_C
-IN_B
OUT_B
OUT_C -IN_C
19
July 2, 2012
FN7962.0