IRFR110 Datasheet, PDF (5/7 Pages) Intersil Corporation – 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs

IRFR110, IRFU110
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
I_D = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. DRAIN TO SOURCE BREAKDOWN VOLTAGE vs
JUNCTION TEMPERATURE
500
V_GS = 0V, f = 1MHz
C_ISS = CGS + CGD
400
C_RSS = CGD
C_OSS ≈ CDS + CGS
300
C_ISS
200
C_OSS
100
C_RSS
0
1
10
10²
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DS ≥ 50V
2.0
T_J = 25^oC
1.5
T_J = 175^oC
1.0
0.5
0
0
2
4
6
8
10
I_D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
10²
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
T_J = 175^oC
1.0
T_J = 25^oC
0.1
0
0.4
0.8
1.2
1.6
2.0
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I_D = 5.6A
16
12
V_DS = 80V
V_DS = 50V
V_DS = 20V
8
4
0
0
2
4
6
8
10
Q_g, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-375