IRFR110 Datasheet, PDF (4/7 Pages) Intersil Corporation – 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs

IRFR110, IRFU110
Typical Performance Curves Unless Otherwise Specified (Continued)
10²
10
1.0
0.1
1
T_C = 25^oC
T_J = MAX RATED
SINGLE PULSE
10µs
100µs
1ms
OPERATION IN THIS
AREA LIMITED
BY r_DS(ON)
10ms
DC
10
10²
10³
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
10
8
6
4
2
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = 10V
V_GS = 8V
V_GS = 7V
V_GS = 6V
V_GS = 5V
V_GS = 4V
10
20
30
40
50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8
V_GS 10V
V_GS 8V
6
V_GS 7V
4
V_GS = 6V
2
V_GS 5V
V_GS 4V
0
0
2
4
6
8
10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DS ≥ 50V
1
T_J = 175^oC
T_J = 25^oC
0.1
10^-2
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4
3
2
V_GS = 10V
V_GS = 20V
1
0
0
4
8
12
16
20
I_D, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = 10V
2.4
1.8
I_D = 3.3A
1.2
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4-374